2017年4月26日星期三

STD5NM60T4 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET

STD5NM60T4 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET

Part Number: STD5NM60T4

Package: TO-252

Brand: ST

























Features
-100% avalanche tested
-HIgh dv/dt and avalanche capabilities
-Low input capacitance and gate charge
-Low gate input resistance
















Part StatusActive 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)600V 
Current - Continuous Drain (Id) @ 25°C5A (Tc) 
Vgs(th) (Max) @ Id5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V 
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V 
FET Feature- 
Power Dissipation (Max)96W (Tc) 
Rds On (Max) @ Id, Vgs1 Ohm @ 2.5A, 10V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackageD-Pak 
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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