2017年4月26日星期三

SI3493BDV-T1-GE3 VISHAY P-Channel 20-V (D-S) MOSFET

SI3493BDV-T1-GE3 VISHAY P-Channel 20-V (D-S) MOSFET

Part Number: SI3493BDV-T1-GE3

Brand: VISHAY

Package: SOT23-6













































Part StatusActive 
FET TypeP-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)20V 
Current - Continuous Drain (Id) @ 25°C8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V 
Vgs(th) (Max) @ Id900mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs43.5nC @ 5V 
Input Capacitance (Ciss) (Max) @ Vds1805pF @ 10V 
Vgs (Max)±8V 
FET Feature- 
Power Dissipation (Max)2.08W (Ta), 2.97W (Tc) 
Rds On (Max) @ Id, Vgs27.5 mOhm @ 7A, 4.5V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device Package6-TSOP 
Package / CaseSOT-23-6 Thin, TSOT-23-6


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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