2017年4月24日星期一

RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching

RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching

Part Number: RJH1CF5RDPQ-80

Package: TO-247-3

Brand: Renesas












Features
• Voltage resonance circuit use
• Reverse conducting IGBT with monolithic body diode
• High efficiency device for induction heating
• Low collector to emitter saturation voltage
VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating















Part StatusActive 
IGBT Type- 
Voltage - Collector Emitter Breakdown (Max)1200V 
Current - Collector (Ic) (Max)50A 
Current - Collector Pulsed (Icm)- 
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 25A 
Power - Max192.3W 
Switching Energy- 
Input TypeStandard 
Td (on/off) @ 25°C- 
Test Condition- 
Operating Temperature150°C (TJ) 
Mounting TypeThrough Hole 
Package / CaseTO-247-3 
Supplier Device PackageTO-247


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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