2017年4月26日星期三

STD5NM60T4 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET

STD5NM60T4 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET

Part Number: STD5NM60T4

Package: TO-252

Brand: ST

























Features
-100% avalanche tested
-HIgh dv/dt and avalanche capabilities
-Low input capacitance and gate charge
-Low gate input resistance
















Part StatusActive 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)600V 
Current - Continuous Drain (Id) @ 25°C5A (Tc) 
Vgs(th) (Max) @ Id5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V 
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V 
FET Feature- 
Power Dissipation (Max)96W (Tc) 
Rds On (Max) @ Id, Vgs1 Ohm @ 2.5A, 10V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackageD-Pak 
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

SI3493BDV-T1-GE3 VISHAY P-Channel 20-V (D-S) MOSFET

SI3493BDV-T1-GE3 VISHAY P-Channel 20-V (D-S) MOSFET

Part Number: SI3493BDV-T1-GE3

Brand: VISHAY

Package: SOT23-6













































Part StatusActive 
FET TypeP-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)20V 
Current - Continuous Drain (Id) @ 25°C8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V 
Vgs(th) (Max) @ Id900mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs43.5nC @ 5V 
Input Capacitance (Ciss) (Max) @ Vds1805pF @ 10V 
Vgs (Max)±8V 
FET Feature- 
Power Dissipation (Max)2.08W (Ta), 2.97W (Tc) 
Rds On (Max) @ Id, Vgs27.5 mOhm @ 7A, 4.5V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device Package6-TSOP 
Package / CaseSOT-23-6 Thin, TSOT-23-6


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

2017年4月24日星期一

RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching

RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching

Part Number: RJH1CF5RDPQ-80

Package: TO-247-3

Brand: Renesas












Features
• Voltage resonance circuit use
• Reverse conducting IGBT with monolithic body diode
• High efficiency device for induction heating
• Low collector to emitter saturation voltage
VCE(sat) = 1.95 V typ. (at IC = 25 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating















Part StatusActive 
IGBT Type- 
Voltage - Collector Emitter Breakdown (Max)1200V 
Current - Collector (Ic) (Max)50A 
Current - Collector Pulsed (Icm)- 
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 25A 
Power - Max192.3W 
Switching Energy- 
Input TypeStandard 
Td (on/off) @ 25°C- 
Test Condition- 
Operating Temperature150°C (TJ) 
Mounting TypeThrough Hole 
Package / CaseTO-247-3 
Supplier Device PackageTO-247


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

2017年4月13日星期四

FDD6612A N-Channel, Logic Level, PowerTrench™ MOSFET

FDD6612A N-Channel, Logic Level, PowerTrench™ MOSFET

Part Number: FDD6612A 

Package: D-PAK (TO-252AA)

Brand: FAIRCHILD



















Features
· 30 A, 30 V RDS(ON) = 20 mW @ VGS = 10 V
RDS(ON) = 28 mW @ VGS = 4.5 V
· Low gate charge
· Fast Switching
· High performance trench technology for extremely
low RDS(ON)

Part StatusActive 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)30V 
Current - Continuous Drain (Id) @ 25°C9.5A (Ta), 30A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V 
Vgs(th) (Max) @ Id3V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 5V 
Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V 
Vgs (Max)±20V 
FET Feature- 
Power Dissipation (Max)2.8W (Ta), 36W (Tc) 
Rds On (Max) @ Id, Vgs20 mOhm @ 9.5A, 10V 
Operating Temperature-55°C ~ 175°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackageD-PAK (TO-252AA) 
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

BTN7930B High Current PN Half Bridge NovalithIC

BTN7930B High Current PN Half Bridge NovalithIC

Part Number: BTN7930B

Brand: INFINEON

Package: TO263-7














Features
• Path resistance of max. 55 mΩ @ 150 °C (typ. 28 mΩ @ 25 °C)
High Side: max. 17 mΩ @ 150 °C (typ. 10 mΩ @ 25 °C)
Low Side: max. 38 mΩ @ 150 °C (typ. 18 mΩ @ 25 °C)
(for BTN7930B (SMD))
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 20 A min. / 32 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified



Part StatusDiscontinued at Digi-Key
Motor Type - Stepper-
Motor Type - AC, DCBrushed DC
FunctionDriver - Fully Integrated, Control and Power Stage
Output ConfigurationHalf Bridge
InterfaceParallel
TechnologyPower MOSFET
Step Resolution-
ApplicationsGeneral Purpose
Current - Output32A
Voltage - Supply8 V ~ 18 V
Voltage - Load8 V ~ 18 V
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device PackagePG-TO263-7


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website: