2017年8月28日星期一

IXTA1R4N100P N-Channel Enhancement Mode Avalanche Rated

IXTA1R4N100P N-Channel Enhancement Mode Avalanche Rated

Part Number: IXTA1R4N100P

Brand: IXYS

Package: TO-263






































Part StatusActive 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)1000V 
Current - Continuous Drain (Id) @ 25°C1.4A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)10V 
Vgs(th) (Max) @ Id4.5V @ 50µA 
Gate Charge (Qg) (Max) @ Vgs17.8nC @ 10V 
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V 
Vgs (Max)±20V 
FET Feature- 
Power Dissipation (Max)63W (Tc) 
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackageTO-263 (IXTA) 
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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