2017年8月3日星期四

BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

BFP840ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor

Part Number: BFP840ESD

Brand: INFINEON

Package: SOT-343






























Features
• Robust very low noise amplifier based on Infineon´s reliable
high volume SiGe:C technology
• Unique combination of high end RF performance and robustness:
20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
• Very high transition frequency fT = 80 GHz enables very low
noise figure at high frequencies:
NFmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
• High gain |S21|
2
 = 18.5 dB at 5.5 GHz, 1.8 V, 10 mA
• OIP3 = 23 dBm at 5.5 GHz, 1.5 V, 6 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V
(2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free
industry standard package with visible leads
• Qualification report according to AEC-Q101 available













Part StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)2.25V
Frequency - Transition80GHz
Noise Figure (dB Typ @ f)0.85dB @ 5.5GHz
Gain18.5dB
Power - Max75mW
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 10mA, 1.8V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSC-82A, SOT-343
Supplier Device PackageSOT-343


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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