NPN PNP Transistor

2017年8月28日星期一

IXTA1R4N100P N-Channel Enhancement Mode Avalanche Rated

IXTA1R4N100P N-Channel Enhancement Mode Avalanche Rated

Part Number: IXTA1R4N100P

Brand: IXYS

Package: TO-263

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	17.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	63W (Tc)
Rds On (Max) @ Id, Vgs	11 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (IXTA)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

2017年8月23日星期三

BSC123N08NS3G INFINEON OptiMOS™3 Power-Transistor

BSC123N08NS3G INFINEON OptiMOS™3 Power-Transistor

Part Number: BSC123N08NS3G

Brand: INFINEON

Package: TDSON-8

Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1870pF @ 40V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs	12.3 mOhm @ 33A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

BSC070N10NS3G Infineon OptiMOSTM3 Power-Transistor

BSC070N10NS3G Infineon OptiMOSTM3 Power-Transistor

Part Number: BSC070N10NS3G

Brand: INFINEON

Package: TDSON-8

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Rds On (Max) @ Id, Vgs	7 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website: