NPN PNP Transistor: IPB036N12N3G Infineon OptiMOS™3 Power-Transistor

IPB036N12N3G Infineon OptiMOS™3 Power-Transistor

Part Number: IPB036N12N3G

Brand: INFINEON

Package: TO-263-7

Features
• Ideal for high frequency switching and DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance RDS(on)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21

Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	211nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 60V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB