2017年6月29日星期四

SI7101DN-T1-GE3 VISHAY P-Channel 30 V (D-S) MOSFET

SI7101DN-T1-GE3 VISHAY P-Channel 30 V (D-S) MOSFET

Part Number: SI7101DN-T1-GE3

Brand: VISHAY

Package: PAK1212-8


































































Part StatusActive 
FET TypeP-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)30V 
Current - Continuous Drain (Id) @ 25°C35A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V 
Vgs(th) (Max) @ Id2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V 
Input Capacitance (Ciss) (Max) @ Vds3595pF @ 15V 
Vgs (Max)±25V 
FET Feature- 
Power Dissipation (Max)3.7W (Ta), 52W (Tc) 
Rds On (Max) @ Id, Vgs7.2 mOhm @ 15A, 10V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackagePowerPAK® 1212-8 
Package / CasePowerPAK® 1212-8


Contact Type

Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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