2017年3月14日星期二

IPD03N03LAG Infineon OptiMOS®2 Power-Transistor

IPD03N03LAG Infineon OptiMOS®2 Power-Transistor

Part Number: IPD03N03LAG

Package: TO-252

Brand: Infineon

























Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant

























Part StatusObsolete 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)25V 
Current - Continuous Drain (Id) @ 25°C90A (Tc) 
Vgs(th) (Max) @ Id2V @ 70µA 
Gate Charge (Qg) (Max) @ Vgs41nC @ 5V 
Input Capacitance (Ciss) (Max) @ Vds5200pF @ 15V 
FET Feature- 
Power Dissipation (Max)115W (Tc) 
Rds On (Max) @ Id, Vgs3.2 mOhm @ 60A, 10V 
Operating Temperature-55°C ~ 175°C (TJ) 
Mounting TypeSurface Mount 
Supplier Device PackagePG-TO252-3 
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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