2017年2月23日星期四

STH170N8F7-2 STM High avalanche ruggedness

STH170N8F7-2 STM High avalanche ruggedness

Model Number: STH170N8F7-2

Package: TO-3P-3

Brand: STMicroelectronics



















Features
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness

Applications
• Switching applications

























Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)35A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 20A
Power - Max79W
Switching Energy300µJ (on), 1.28mJ (off)
Input TypeStandard
Gate Charge96nC
Td (on/off) @ 25°C21.5ns/180ns
Test Condition480V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3P


Contact Way
Name: Fanny Young
Skype ID: mjdccm
Email: Fanny.Young@szmjd.net
Trademanager: cn200873376

Website:

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