NPN PNP Transistor: 二月 2017

2017年2月28日星期二

CSD16412Q5A N-Channel NexFET™ Power MOSFETs

CSD16412Q5A N-Channel NexFET™ Power MOSFETs

Part Number: CSD16412Q5A

Package: SON5x6

Brand: TI

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	14A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 12.5V
Vgs (Max)	+16V, -12V
FET Feature	-
Power Dissipation (Max)	3W (Ta)
Rds On (Max) @ Id, Vgs	11 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-VSON (5x6)
Package / Case	8-PowerTDFN

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

2017年2月27日星期一

IXGH48N60C3D1 GenX3 600V IGBT with Diode

IXGH48N60C3D1 GenX3 600V IGBT with Diode

Part Number: IXGH48N60C3D1

Brand: IXYS

Package: TO-247

Features
-Optimized for Low Switching Losses
-Square RBSOA
-Anti-Parallel Ultra Fast Diode
-Fast Switching
-Avalanche Rated
-International Standard Package

Advantages
-High Power Density
-Low Gate Drive Requirement

Part Status	Active
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Current - Collector Pulsed (Icm)	250A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Power - Max	300W
Switching Energy	410µJ (on), 230µJ (off)
Input Type	Standard
Gate Charge	77nC
Td (on/off) @ 25°C	19ns/60ns
Test Condition	400V, 30A, 3 Ohm, 15V
Reverse Recovery Time (trr)	25ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD (IXGH)

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

2017年2月24日星期五

STP75NS04Z MOSFET N-CHANNEL CLAMPED 7M OHM - 80A

STP75NS04Z MOSFET N-CHANNEL CLAMPED 7M OHM - 80A

Model Number: STP75NS04Z

Package / Case: TO-220-3

Brand: STMicroelectronics

General features
-Low capacitance and gate charge
-100% avalanche tested
-175°C maximum junction temperature

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	33V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1860pF @ 25V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Rds On (Max) @ Id, Vgs	11 mOhm @ 40A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

2017年2月23日星期四

STH360N4F6-2 N-channel 40 V 180 A STripFET Pwr MOSFET

STH360N4F6-2 N-channel 40 V 180 A STripFET Pwr MOSFET

Model Number: STH360N4F6-2

Brand Name: STMicroelectronics

Package: TO-263-3, D²Pak (2 Leads + Tab) Variant

Features
-Low gate charge
-Very low on-resistance
-High avalanche ruggedness

Applications
-Switching applications

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	340nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	17930pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	1.25 mOhm @ 60A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	H²PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab) Variant

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

STH170N8F7-2 STM High avalanche ruggedness

STH170N8F7-2 STM High avalanche ruggedness

Model Number: STH170N8F7-2

Package: TO-3P-3

Brand: STMicroelectronics

Features
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness

Applications
• Switching applications

Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	150A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
Power - Max	79W
Switching Energy	300µJ (on), 1.28mJ (off)
Input Type	Standard
Gate Charge	96nC
Td (on/off) @ 25°C	21.5ns/180ns
Test Condition	480V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3P

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

STGWF30NC60S IGBT Transistors 30A 600V Fast IGBT 5kHz 1.9 VCE

STGWF30NC60S IGBT Transistors 30A 600V Fast IGBT 5kHz 1.9 VCE

Model Number: STGWF30NC60S

Package: TO-3PF

Brand: STMicroelectronics

Features
-Optimized performance for medium operating
frequencies up to 5 kHz in hard switching
-Low on-voltage drop (VCE(sat))
-High current capability

Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	35A
Current - Collector Pulsed (Icm)	150A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 20A
Power - Max	79W
Switching Energy	300µJ (on), 1.28mJ (off)
Input Type	Standard
Gate Charge	96nC
Td (on/off) @ 25°C	21.5ns/180ns
Test Condition	480V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Supplier Device Package	TO-3P

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs

2017年2月21日星期二

STGW15H120F2 IGBT Trench Field Stop 1200V 30A 259W Through Hole TO-247

STGW15H120F2 IGBT Trench Field Stop 1200V 30A 259W Through Hole TO-247

Model Number: STGW15H120F2

Package: TO-247

Brand Name: STMicroelectronics

Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Current - Collector Pulsed (Icm)	60A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 15A
Power - Max	259W
Switching Energy	380µJ (on), 370µJ (off)
Input Type	Standard
Gate Charge	67nC
Td (on/off) @ 25°C	23ns/111ns
Test Condition	600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

http://www.mjdic.com/about

szmjd.en.alibaba.com

http://www.hkmjd.com/cpzs