NPN PNP Transistor

2017年3月20日星期一

STD6NF10T4 ST MOSFET N-Ch 100 Volt 6 Amp

STD6NF10T4 ST MOSFET N-Ch 100 Volt 6 Amp

Part Number: STD6NF10T4

Package: TO-252

Brand: ST

Features
-Exceptional dv/dt capability
-100% avalanche tested

Application
-Switching applications

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	250 mOhm @ 3A, 10V
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

2017年3月17日星期五

IPW60R299CP INFINEON CoolMOS Power Transistor

IPW60R299CP INFINEON CoolMOS Power Transistor

Part Number: IPW60R299CP

Brand: INFINEON

Package: TO-247

Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:
Hard switching SMPS topologies

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Rds On (Max) @ Id, Vgs	299 mOhm @ 6.6A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

IPP042N03LG INFINEON OptiMOS™3 Power-Transistor

IPP042N03LG INFINEON OptiMOS™3 Power-Transistor

Part Number: IPP042N03LG

Brand: INFINEON

Package: TO-220

Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	79W (Tc)
Rds On (Max) @ Id, Vgs	4.2 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO-220-3
Package / Case	TO-220-3

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

2017年3月14日星期二

IPD03N03LAG Infineon OptiMOS®2 Power-Transistor

IPD03N03LAG Infineon OptiMOS®2 Power-Transistor

Part Number: IPD03N03LAG

Package: TO-252

Brand: Infineon

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant

Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs(th) (Max) @ Id	2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 15V
FET Feature	-
Power Dissipation (Max)	115W (Tc)
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 60A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

IKW15N120T2 IGBT in 2nd generation TrenchStop technology

IKW15N120T2 IGBT in 2nd generation TrenchStop technology

Part Number: IKW15N120T2

Brand: INFINEON

Package: TO-247

• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop®
2nd generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1
for target applications
• Pb-free lead plating; RoHS compliant

Part Status	Active
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	30A
Current - Collector Pulsed (Icm)	60A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Power - Max	235W
Switching Energy	2.05mJ
Input Type	Standard
Gate Charge	93nC
Td (on/off) @ 25°C	32ns/362ns
Test Condition	600V, 15A, 41.8 Ohm, 15V
Reverse Recovery Time (trr)	300ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3

Contact Way

Name: Fanny Young

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website: