SPA17N80C3 INFINEON Cool MOS Power Transistor

SPA17N80C3 INFINEON Cool MOS Power Transistor

Part Number: SPA17N80C3

Brand: INFINEON

Package: TO-220F

Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Datasheets	SPP,SPA17N80C3
Product Photos	TO-220AB
Product Training Modules	CoolMOS™ CP High Voltage MOSFETs Converters
Standard Package	500
Category	Discrete Semiconductor Products
Family	FETs - Single
Series	CoolMOS™
Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Rds On (Max) @ Id, Vgs	290 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Gate Charge (Qg) @ Vgs	177nC @ 10V
Input Capacitance (Ciss) @ Vds	2320pF @ 25V
Power - Max	42W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	PG-TO220-3

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

szmjd.en.alibaba.com

http://www.mjdic.com/about

http://www.hkmjd.com/cpzs

TPCA8064 TOSHIBA High-Efficiency DC-DC Converters

TPCA8064 TOSHIBA High-Efficiency DC-DC Converters

Part Number: TPCA8064

Package: QFN-8

Brand: TOSHIBA

Features
(1) Small footprint due to a small and thin package
(2) High-speed switching
(3) Small gate change: QSW = 5.0 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 4.5 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA)

Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Vgs(th) (Max) @ Id	2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs	8.2 mOhm @ 10A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

szmjd.en.alibaba.com

http://www.mjdic.com/about

http://www.hkmjd.com/cpzs

STGB10M65DF2 ST Trench gate field-stop IGBT

STGB10M65DF2 ST Trench gate field-stop IGBT

Part Number: STGB10M65DF2

Package: TO-263

Brand: ST

Features
· 6 µs of short-circuit withstand time
· VCE(sat) = 1.55 V (typ.) @ IC = 10 A
· Tight parameter distribution
· Safer paralleling
· Low thermal resistance
· Soft and very fast recovery antiparallel diode

Applications
· Motor control
· UPS
· PFC

Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	20A
Current - Collector Pulsed (Icm)	40A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 10A
Power - Max	115W
Switching Energy	120µJ (on), 270µJ (off)
Input Type	Standard
Gate Charge	28nC
Td (on/off) @ 25°C	19ns/91ns
Test Condition	400V, 10A, 22 Ohm, 15V
Reverse Recovery Time (trr)	96ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

Contact Type

Skype ID: mjdccm

Email: Fanny.Young@szmjd.net

Trademanager: cn200873376

Website:

szmjd.en.alibaba.com

http://www.mjdic.com/about

http://www.hkmjd.com/cpzs